SQS411ENW-T1_GE3 Pagpepresyo (USD) [250794pcs Stock]
- 1 pcs$0.14748
- Bilang ng Bahagi:
- SQS411ENW-T1_GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET P-CH 40V PPAK 1212-8W.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Mga Transistor - Bipolar (BJT) - RF, Diode - Zener - Arrays, Mga Transistor - FET, MOSFET - RF, Transistor - Espesyal na Pakay, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SQS411ENW-T1_GE3 electronic components. SQS411ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS411ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS411ENW-T1_GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SQS411ENW-T1_GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET P-CH 40V PPAK 1212-8W
Serye :
Automotive, AEC-Q101, TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
16A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
27.3 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3191pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
53.6W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerPAK® 1212-8W
Pakete / Kaso :
PowerPAK® 1212-8W
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