STMicroelectronics - STU10NM65N

KEY Part #: K6415594

[12356pcs Stock]


    Bilang ng Bahagi:
    STU10NM65N
    Tagagawa:
    STMicroelectronics
    Detalyadong Paglalarawan:
    MOSFET N-CH 650V 9A IPAK.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Diode - Zener - Single, Thyristors - DIACs, SIDACs, Mga Transistor - JFET, Transistor - IGBTs - Mga Module, Diode - Rectifiers - Arrays, Mga Transistor - Bipolar (BJT) - RF and Diode - Zener - Arrays ...
    Kumpetensyang Pakinabang:
    We specialize in STMicroelectronics STU10NM65N electronic components. STU10NM65N can be shipped within 24 hours after order. If you have any demands for STU10NM65N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STU10NM65N Mga katangian ng produkto

    Bilang ng Bahagi : STU10NM65N
    Tagagawa : STMicroelectronics
    Paglalarawan : MOSFET N-CH 650V 9A IPAK
    Serye : MDmesh™ II
    Katayuan ng Bahagi : Obsolete
    Uri ng FET : N-Channel
    Teknolohiya : MOSFET (Metal Oxide)
    Drain sa Source Voltage (Vdss) : 650V
    Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 9A (Tc)
    Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 480 mOhm @ 4.5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
    Vgs (Max) : ±25V
    Input Capacitance (Ciss) (Max) @ Vds : 850pF @ 50V
    Tampok ng FET : -
    Power Dissipation (Max) : 90W (Tc)
    Temperatura ng pagpapatakbo : 150°C (TJ)
    Uri ng Pag-mount : Through Hole
    Package ng Tagabigay ng Device : I-PAK
    Pakete / Kaso : TO-251-3 Short Leads, IPak, TO-251AA

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