[13623pcs Stock]
- Bilang ng Bahagi:
- IRF7807APBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 8.3A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Diode - Zener - Single, Diode - RF, Diode - Rectifiers - Arrays, Transistor - IGBTs - Mga Module, Mga Transistor - FET, MOSFET - RF, Thyristors - Mga SCR and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF7807APBF electronic components. IRF7807APBF can be shipped within 24 hours after order. If you have any demands for IRF7807APBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7807APBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF7807APBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 8.3A 8-SOIC
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8.3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SO
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
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