SQ2315ES-T1_GE3 Pagpepresyo (USD) [431769pcs Stock]
- 1 pcs$0.22939
- 10 pcs$0.19340
- 100 pcs$0.14519
- 500 pcs$0.10647
- 1,000 pcs$0.08227
- Bilang ng Bahagi:
- SQ2315ES-T1_GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET P-CHAN 12V SOT23.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Diode - Zener - Arrays, Diode - Rectifiers - Arrays, Transistor - Programmable Unijunction, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SQ2315ES-T1_GE3 electronic components. SQ2315ES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2315ES-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ2315ES-T1_GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SQ2315ES-T1_GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET P-CHAN 12V SOT23
Serye :
Automotive, AEC-Q101, TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
50 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
870pF @ 4V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-23-3 (TO-236)
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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