DMN3016LDN-13 Pagpepresyo (USD) [462518pcs Stock]
- 1 pcs$0.07997
- 10,000 pcs$0.07048
- Bilang ng Bahagi:
- DMN3016LDN-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2 N-CH 9.2A VDFN3030-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Programmable Unijunction, Mga Transistor - Bipolar (BJT) - RF, Mga module ng Power driver, Transistors - IGBTs - Single, Thyristors - Mga TRIAC, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN3016LDN-13 electronic components. DMN3016LDN-13 can be shipped within 24 hours after order. If you have any demands for DMN3016LDN-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3016LDN-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMN3016LDN-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2 N-CH 9.2A VDFN3030-8
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
-
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9.2A (Ta)
Rds On (Max) @ Id, Vgs :
20 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1415pF @ 15V
Kapangyarihan - Max :
-
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
V-DFN3030-8 (Type J)
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