TK60P03M1,RQ(S Pagpepresyo (USD) [214793pcs Stock]
- 1 pcs$0.19037
- 2,000 pcs$0.18942
- Bilang ng Bahagi:
- TK60P03M1,RQ(S
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 60A DPAK-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Single, Transistor - Espesyal na Pakay, Transistor - Programmable Unijunction, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK60P03M1,RQ(S electronic components. TK60P03M1,RQ(S can be shipped within 24 hours after order. If you have any demands for TK60P03M1,RQ(S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK60P03M1,RQ(S Mga katangian ng produkto
Bilang ng Bahagi :
TK60P03M1,RQ(S
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 30V 60A DPAK-3
Serye :
U-MOSVI-H
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
60A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.4 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
63W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DPAK
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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