TJ8S06M3L(T6L1,NQ) Pagpepresyo (USD) [202426pcs Stock]
- 1 pcs$0.20200
- 2,000 pcs$0.20099
- Bilang ng Bahagi:
- TJ8S06M3L(T6L1,NQ)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET P-CH 60V 8A DPAK-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - RF, Transistors - IGBTs - Single, Mga Transistor - JFET, Thyristors - SCR - Mga Module, Mga Transistor - FET, MOSFET - RF and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TJ8S06M3L(T6L1,NQ) electronic components. TJ8S06M3L(T6L1,NQ) can be shipped within 24 hours after order. If you have any demands for TJ8S06M3L(T6L1,NQ), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TJ8S06M3L(T6L1,NQ) Mga katangian ng produkto
Bilang ng Bahagi :
TJ8S06M3L(T6L1,NQ)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET P-CH 60V 8A DPAK-3
Serye :
U-MOSVI
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
104 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (Max) :
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds :
890pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
27W (Tc)
Temperatura ng pagpapatakbo :
175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DPAK+
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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