DMN3012LFG-7 Pagpepresyo (USD) [117267pcs Stock]
- 1 pcs$0.31541
- Bilang ng Bahagi:
- DMN3012LFG-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2 N-CH 30V POWERDI3333.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Programmable Unijunction, Diode - Zener - Single and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN3012LFG-7 electronic components. DMN3012LFG-7 can be shipped within 24 hours after order. If you have any demands for DMN3012LFG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3012LFG-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMN3012LFG-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2 N-CH 30V POWERDI3333
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A (Tc)
Rds On (Max) @ Id, Vgs :
12 mOhm @ 15A, 5V, 6 mOhm @ 15A, 5V
Vgs (th) (Max) @ Id :
2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
850pF @ 15V, 1480pF @ 15V
Kapangyarihan - Max :
2.2W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerLDFN
Package ng Tagabigay ng Device :
PowerDI3333-8
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