SCTH90N65G2V-7 Pagpepresyo (USD) [1983pcs Stock]
- 1 pcs$21.84043
- Bilang ng Bahagi:
- SCTH90N65G2V-7
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- SILICON CARBIDE POWER MOSFET 650.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Thyristors - Mga SCR, Mga module ng Power driver, Transistor - Espesyal na Pakay, Diode - RF, Mga Transistor - FET, MOSFET - RF, Thyristors - Mga TRIAC and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics SCTH90N65G2V-7 electronic components. SCTH90N65G2V-7 can be shipped within 24 hours after order. If you have any demands for SCTH90N65G2V-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCTH90N65G2V-7 Mga katangian ng produkto
Bilang ng Bahagi :
SCTH90N65G2V-7
Tagagawa :
STMicroelectronics
Paglalarawan :
SILICON CARBIDE POWER MOSFET 650
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
SiCFET (Silicon Carbide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
90A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 50A, 18V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 18V
Vgs (Max) :
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds :
3300pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
330W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
H2PAK-7
Pakete / Kaso :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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