GA10SICP12-263 Pagpepresyo (USD) [3349pcs Stock]
- 1 pcs$19.21305
- 10 pcs$17.77033
- 25 pcs$16.32929
- 100 pcs$15.17669
- Bilang ng Bahagi:
- GA10SICP12-263
- Tagagawa:
- GeneSiC Semiconductor
- Detalyadong Paglalarawan:
- TRANS SJT 1200V 25A TO263-7.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Programmable Unijunction, Transistor - IGBTs - Mga Module, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Arrays, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in GeneSiC Semiconductor GA10SICP12-263 electronic components. GA10SICP12-263 can be shipped within 24 hours after order. If you have any demands for GA10SICP12-263, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GA10SICP12-263 Mga katangian ng produkto
Bilang ng Bahagi :
GA10SICP12-263
Tagagawa :
GeneSiC Semiconductor
Paglalarawan :
TRANS SJT 1200V 25A TO263-7
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
-
Teknolohiya :
SiC (Silicon Carbide Junction Transistor)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
25A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
100 mOhm @ 10A
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
1403pF @ 800V
Tampok ng FET :
-
Power Dissipation (Max) :
170W (Tc)
Temperatura ng pagpapatakbo :
175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D2PAK (7-Lead)
Pakete / Kaso :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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