SISC06DN-T1-GE3 Pagpepresyo (USD) [211203pcs Stock]
- 1 pcs$0.17513
- Bilang ng Bahagi:
- SISC06DN-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - FET, MOSFET - RF, Diode - RF and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SISC06DN-T1-GE3 electronic components. SISC06DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISC06DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISC06DN-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SISC06DN-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 30V
Serye :
TrenchFET® Gen IV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
27.6A (Ta), 40A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.7 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Vgs (Max) :
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds :
2455pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
3.7W (Ta), 46.3W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerPAK® 1212-8
Pakete / Kaso :
PowerPAK® 1212-8
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