IPL65R650C6SATMA1 Pagpepresyo (USD) [131152pcs Stock]
- 1 pcs$0.28202
- 5,000 pcs$0.25870
- Bilang ng Bahagi:
- IPL65R650C6SATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 8TSON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Programmable Unijunction, Mga Transistor - Bipolar (BJT) - RF, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPL65R650C6SATMA1 electronic components. IPL65R650C6SATMA1 can be shipped within 24 hours after order. If you have any demands for IPL65R650C6SATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPL65R650C6SATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPL65R650C6SATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 8TSON
Serye :
CoolMOS™ C6
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6.7A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
56.8W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Thin-PAK (5x6)
Pakete / Kaso :
8-PowerTDFN
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