IPG20N10S4L22AATMA1 Pagpepresyo (USD) [116120pcs Stock]
- 1 pcs$0.31853
- 5,000 pcs$0.26582
- Bilang ng Bahagi:
- IPG20N10S4L22AATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 100V 20A TDSON-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Programmable Unijunction, Transistor - Mga FET, MOSFET - Single, Transistors - IGBTs - Single, Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Arrays, Diode - Zener - Single and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPG20N10S4L22AATMA1 electronic components. IPG20N10S4L22AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N10S4L22AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N10S4L22AATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPG20N10S4L22AATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 100V 20A TDSON-8
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A
Rds On (Max) @ Id, Vgs :
22 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1755pF @ 25V
Kapangyarihan - Max :
60W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
PG-TDSON-8-10
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