CSD25213W10 Pagpepresyo (USD) [736098pcs Stock]
- 1 pcs$0.05025
- 3,000 pcs$0.03821
- Bilang ng Bahagi:
- CSD25213W10
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- MOSFET P-CH 20V 1.6A 4DSBGA.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module, Thyristors - DIACs, SIDACs, Thyristors - Mga TRIAC, Diode - RF, Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD25213W10 electronic components. CSD25213W10 can be shipped within 24 hours after order. If you have any demands for CSD25213W10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD25213W10 Mga katangian ng produkto
Bilang ng Bahagi :
CSD25213W10
Tagagawa :
Texas Instruments
Paglalarawan :
MOSFET P-CH 20V 1.6A 4DSBGA
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.6A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
47 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
2.9nC @ 4.5V
Vgs (Max) :
-6V
Input Capacitance (Ciss) (Max) @ Vds :
478pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
1W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
4-DSBGA (1x1)
Pakete / Kaso :
4-UFBGA, DSBGA
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