APTC60AM35T1G Pagpepresyo (USD) [2098pcs Stock]
- 1 pcs$20.63798
- 100 pcs$20.08387
- Bilang ng Bahagi:
- APTC60AM35T1G
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 600V 72A SP1.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Mga Transistor - JFET and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation APTC60AM35T1G electronic components. APTC60AM35T1G can be shipped within 24 hours after order. If you have any demands for APTC60AM35T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTC60AM35T1G Mga katangian ng produkto
Bilang ng Bahagi :
APTC60AM35T1G
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET 2N-CH 600V 72A SP1
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Half Bridge)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
72A
Rds On (Max) @ Id, Vgs :
35 mOhm @ 72A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs :
518nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
14000pF @ 25V
Kapangyarihan - Max :
416W
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
SP1
Package ng Tagabigay ng Device :
SP1
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