[13210pcs Stock]
- Bilang ng Bahagi:
- FDV303N_NB9U008
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 25V 680MA SOT-23.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Single, Transistor - Mga FET, MOSFET - Single, Thyristors - Mga TRIAC, Mga Transistor - Bipolar (BJT) - RF and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDV303N_NB9U008 electronic components. FDV303N_NB9U008 can be shipped within 24 hours after order. If you have any demands for FDV303N_NB9U008, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDV303N_NB9U008 Mga katangian ng produkto
Bilang ng Bahagi :
FDV303N_NB9U008
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 25V 680MA SOT-23
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
680mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.7V, 4.5V
Rds On (Max) @ Id, Vgs :
450 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
2.3nC @ 4.5V
Vgs (Max) :
8V
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
350mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-23
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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