APT22F120B2 Pagpepresyo (USD) [438pcs Stock]
- 30 pcs$10.12712
- Bilang ng Bahagi:
- APT22F120B2
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- MOSFET N-CH 1200V 23A T-MAX.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Diode - Zener - Single, Transistor - Espesyal na Pakay and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation APT22F120B2 electronic components. APT22F120B2 can be shipped within 24 hours after order. If you have any demands for APT22F120B2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT22F120B2 Mga katangian ng produkto
Bilang ng Bahagi :
APT22F120B2
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET N-CH 1200V 23A T-MAX
Serye :
POWER MOS 8™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
23A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
700 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
8370pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
1040W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
T-MAX™ [B2]
Pakete / Kaso :
TO-247-3 Variant
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