NVMFS5830NLWFT3G Pagpepresyo (USD) [2580pcs Stock]
- 5,000 pcs$0.38922
- Bilang ng Bahagi:
- NVMFS5830NLWFT3G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 40V 172A SO8FL.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - JFET, Thyristors - Mga SCR, Diode - Rectifiers - Arrays, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Diode - RF and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NVMFS5830NLWFT3G electronic components. NVMFS5830NLWFT3G can be shipped within 24 hours after order. If you have any demands for NVMFS5830NLWFT3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFS5830NLWFT3G Mga katangian ng produkto
Bilang ng Bahagi :
NVMFS5830NLWFT3G
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 40V 172A SO8FL
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
29A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
113nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5880pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
3.8W (Ta), 158W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
5-DFN (5x6) (8-SOFL)
Pakete / Kaso :
8-PowerTDFN
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