FCP190N65S3R0 Pagpepresyo (USD) [65548pcs Stock]
- 1 pcs$0.59652
- Bilang ng Bahagi:
- FCP190N65S3R0
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V 190MOHM TO220 I.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Arrays, Mga module ng Power driver, Transistor - Programmable Unijunction, Diode - Rectifiers - Single, Transistors - IGBTs - Single and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FCP190N65S3R0 electronic components. FCP190N65S3R0 can be shipped within 24 hours after order. If you have any demands for FCP190N65S3R0, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP190N65S3R0 Mga katangian ng produkto
Bilang ng Bahagi :
FCP190N65S3R0
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 650V 190MOHM TO220 I
Serye :
SuperFET® III
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
17A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
144W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220-3
Pakete / Kaso :
TO-220-3
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