[3531pcs Stock]
- Bilang ng Bahagi:
- BUK7E4R0-80E,127
- Tagagawa:
- NXP USA Inc.
- Detalyadong Paglalarawan:
- MOSFET N-CH 80V 120A I2PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Transistor - Programmable Unijunction, Mga Transistor - JFET, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - FET, MOSFET - RF, Mga module ng Power driver and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in NXP USA Inc. BUK7E4R0-80E,127 electronic components. BUK7E4R0-80E,127 can be shipped within 24 hours after order. If you have any demands for BUK7E4R0-80E,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK7E4R0-80E,127 Mga katangian ng produkto
Bilang ng Bahagi :
BUK7E4R0-80E,127
Tagagawa :
NXP USA Inc.
Paglalarawan :
MOSFET N-CH 80V 120A I2PAK
Serye :
TrenchMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
80V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
169nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
12030pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
349W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I2PAK
Pakete / Kaso :
TO-262-3 Long Leads, I²Pak, TO-262AA
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