[9435pcs Stock]
- Bilang ng Bahagi:
- GT60N321(Q)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- IGBT 1000V 60A 170W TO3P LH.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga SCR, Diode - Rectifiers - Arrays, Diode - RF, Diode - Zener - Arrays, Transistor - IGBTs - Arrays and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage GT60N321(Q) electronic components. GT60N321(Q) can be shipped within 24 hours after order. If you have any demands for GT60N321(Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GT60N321(Q) Mga katangian ng produkto
Bilang ng Bahagi :
GT60N321(Q)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
IGBT 1000V 60A 170W TO3P LH
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng IGBT :
-
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1000V
Kasalukuyang - Kolektor (Ic) (Max) :
60A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
120A
Vce (on) (Max) @ Vge, Ic :
2.8V @ 15V, 60A
Kapangyarihan - Max :
170W
Paglipat ng Enerhiya :
-
Uri ng input :
Standard
Gate Charge :
-
Td (on / off) @ 25 ° C :
330ns/700ns
Kondisyon ng Pagsubok :
-
Reverse Recovery Time (trr) :
2.5µs
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-3PL
Package ng Tagabigay ng Device :
TO-3P(LH)
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