[9435pcs Stock]
- Bilang ng Bahagi:
- GT10J312(Q)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- IGBT 600V 10A 60W TO220SM.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Diode - Rectifiers - Arrays, Mga Transistor - Bipolar (BJT) - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - DIACs, SIDACs and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage GT10J312(Q) electronic components. GT10J312(Q) can be shipped within 24 hours after order. If you have any demands for GT10J312(Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GT10J312(Q) Mga katangian ng produkto
Bilang ng Bahagi :
GT10J312(Q)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
IGBT 600V 10A 60W TO220SM
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng IGBT :
-
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
600V
Kasalukuyang - Kolektor (Ic) (Max) :
10A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
20A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Kapangyarihan - Max :
60W
Paglipat ng Enerhiya :
-
Uri ng input :
Standard
Gate Charge :
-
Td (on / off) @ 25 ° C :
400ns/400ns
Kondisyon ng Pagsubok :
300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr) :
200ns
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
Package ng Tagabigay ng Device :
TO-220SM
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