Vishay Semiconductor Diodes Division - EGL41D/1

KEY Part #: K6426039

EGL41D/1 Pagpepresyo (USD) [798304pcs Stock]

  • 1 pcs$0.04889
  • 4,000 pcs$0.04865

Bilang ng Bahagi:
EGL41D/1
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 200V 1A DO213AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Diode - Mga Rectifier ng Bridge, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single and Thyristors - SCR - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division EGL41D/1 electronic components. EGL41D/1 can be shipped within 24 hours after order. If you have any demands for EGL41D/1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGL41D/1 Mga katangian ng produkto

Bilang ng Bahagi : EGL41D/1
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 200V 1A DO213AB
Serye : SUPERECTIFIER®
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 200V
Capacitance @ Vr, F : 20pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-213AB, MELF (Glass)
Package ng Tagabigay ng Device : DO-213AB
Operating temperatura - Junction : -65°C ~ 175°C

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