SQ1912EH-T1_GE3 Pagpepresyo (USD) [610452pcs Stock]
- 1 pcs$0.06059
- 3,000 pcs$0.05168
- Bilang ng Bahagi:
- SQ1912EH-T1_GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2 N-CH 20V 800MA SC70-6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - FET, MOSFET - RF, Mga module ng Power driver, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Mga FET, MOSFET - Single, Transistor - Espesyal na Pakay, Mga Transistor - Bipolar (BJT) - RF and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SQ1912EH-T1_GE3 electronic components. SQ1912EH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1912EH-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ1912EH-T1_GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SQ1912EH-T1_GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2 N-CH 20V 800MA SC70-6
Serye :
Automotive, AEC-Q101, TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
800mA (Tc)
Rds On (Max) @ Id, Vgs :
280 mOhm @ 1.2A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
75pF @ 10V
Kapangyarihan - Max :
1.5W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device :
SC-70-6
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