R6076MNZ1C9 Pagpepresyo (USD) [5952pcs Stock]
- 1 pcs$6.92340
- Bilang ng Bahagi:
- R6076MNZ1C9
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CHANNEL 600V 76A TO247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga module ng Power driver, Thyristors - Mga SCR, Transistor - Programmable Unijunction, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga TRIAC, Thyristors - SCR - Mga Module and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor R6076MNZ1C9 electronic components. R6076MNZ1C9 can be shipped within 24 hours after order. If you have any demands for R6076MNZ1C9, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R6076MNZ1C9 Mga katangian ng produkto
Bilang ng Bahagi :
R6076MNZ1C9
Tagagawa :
Rohm Semiconductor
Paglalarawan :
MOSFET N-CHANNEL 600V 76A TO247
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
76A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
55 mOhm @ 38A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
115nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
740W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247
Pakete / Kaso :
TO-247-3
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