Vishay Siliconix - SI3458BDV-T1-E3

KEY Part #: K6416258

SI3458BDV-T1-E3 Pagpepresyo (USD) [239890pcs Stock]

  • 1 pcs$0.15419
  • 3,000 pcs$0.14509

Bilang ng Bahagi:
SI3458BDV-T1-E3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET N-CH 60V 4.1A 6-TSOP.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Transistor - IGBTs - Arrays, Transistor - Programmable Unijunction, Transistor - Mga FET, MOSFET - Arrays and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SI3458BDV-T1-E3 electronic components. SI3458BDV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3458BDV-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI3458BDV-T1-E3 Mga katangian ng produkto

Bilang ng Bahagi : SI3458BDV-T1-E3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET N-CH 60V 4.1A 6-TSOP
Serye : TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4.1A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 30V
Tampok ng FET : -
Power Dissipation (Max) : 2W (Ta), 3.3W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 6-TSOP
Pakete / Kaso : SOT-23-6 Thin, TSOT-23-6

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