[2597pcs Stock]
- Bilang ng Bahagi:
- IPD80R2K8CEBTMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 1.9A TO252-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - IGBTs - Mga Module, Diode - Rectifiers - Single, Transistor - IGBTs - Arrays, Diode - Zener - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPD80R2K8CEBTMA1 electronic components. IPD80R2K8CEBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R2K8CEBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD80R2K8CEBTMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPD80R2K8CEBTMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 800V 1.9A TO252-3
Serye :
CoolMOS™
Katayuan ng Bahagi :
Discontinued at Digi-Key
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.9A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.8 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
42W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252-3
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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