IXTX22N100L Pagpepresyo (USD) [2832pcs Stock]
- 1 pcs$16.81779
- 10 pcs$15.55669
- 100 pcs$13.28605
- Bilang ng Bahagi:
- IXTX22N100L
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 22A PLUS247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Diode - RF, Mga Transistor - JFET, Thyristors - DIACs, SIDACs, Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Single, Transistors - IGBTs - Single and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTX22N100L electronic components. IXTX22N100L can be shipped within 24 hours after order. If you have any demands for IXTX22N100L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTX22N100L Mga katangian ng produkto
Bilang ng Bahagi :
IXTX22N100L
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1000V 22A PLUS247
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
22A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 11A, 20V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 15V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
7050pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
700W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PLUS247™-3
Pakete / Kaso :
TO-247-3
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