SISH110DN-T1-GE3 Pagpepresyo (USD) [126722pcs Stock]
- 1 pcs$0.29188
- Bilang ng Bahagi:
- SISH110DN-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 20V PPAK 1212-8SH.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Mga Transistor - Bipolar (BJT) - RF, Transistor - Espesyal na Pakay, Diode - Mga Rectifier ng Bridge, Diode - RF, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SISH110DN-T1-GE3 electronic components. SISH110DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH110DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH110DN-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SISH110DN-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 20V PPAK 1212-8SH
Serye :
TrenchFET® Gen II
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
13.5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.3 mOhm @ 21.1A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
1.5W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerPAK® 1212-8SH
Pakete / Kaso :
PowerPAK® 1212-8SH
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