[13643pcs Stock]
- Bilang ng Bahagi:
- IRFU3711PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 20V 100A I-PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Diode - Zener - Arrays, Mga module ng Power driver, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFU3711PBF electronic components. IRFU3711PBF can be shipped within 24 hours after order. If you have any demands for IRFU3711PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFU3711PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFU3711PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 20V 100A I-PAK
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.5 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2980pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta), 120W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
IPAK (TO-251)
Pakete / Kaso :
TO-251-3 Short Leads, IPak, TO-251AA
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