DZ3600S17K3B2NOSA1 Pagpepresyo (USD) [65pcs Stock]
- 1 pcs$538.65224
- Bilang ng Bahagi:
- DZ3600S17K3B2NOSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- IGBT MODULE 1700V 3600V.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga SCR, Thyristors - SCR - Mga Module, Diode - RF, Diode - Zener - Arrays, Mga Transistor - FET, MOSFET - RF, Mga module ng Power driver and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies DZ3600S17K3B2NOSA1 electronic components. DZ3600S17K3B2NOSA1 can be shipped within 24 hours after order. If you have any demands for DZ3600S17K3B2NOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DZ3600S17K3B2NOSA1 Mga katangian ng produkto
Bilang ng Bahagi :
DZ3600S17K3B2NOSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
IGBT MODULE 1700V 3600V
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Pag-configure ng Diode :
3 Independent
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
1700V
Kasalukuyang - Average Rectified (Io) (bawat Diode) :
-
Boltahe - Ipasa (Vf) (Max) @ Kung :
2.2V @ 3600A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
3050A @ 900V
Operating temperatura - Junction :
-40°C ~ 125°C
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
A-IHM190-1
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