DD1200S45KL3B5NOSA1 Pagpepresyo (USD) [51pcs Stock]
- 1 pcs$700.76735
- Bilang ng Bahagi:
- DD1200S45KL3B5NOSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- DIODE MODULE 1200V 1200A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Transistor - Programmable Unijunction, Transistor - IGBTs - Arrays, Transistor - IGBTs - Mga Module, Thyristors - Mga SCR, Mga Transistor - FET, MOSFET - RF, Diode - RF and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies DD1200S45KL3B5NOSA1 electronic components. DD1200S45KL3B5NOSA1 can be shipped within 24 hours after order. If you have any demands for DD1200S45KL3B5NOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DD1200S45KL3B5NOSA1 Mga katangian ng produkto
Bilang ng Bahagi :
DD1200S45KL3B5NOSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
DIODE MODULE 1200V 1200A
Serye :
-
Katayuan ng Bahagi :
Active
Pag-configure ng Diode :
2 Independent
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
4500V
Kasalukuyang - Average Rectified (Io) (bawat Diode) :
-
Boltahe - Ipasa (Vf) (Max) @ Kung :
3.1V @ 1200A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
1500A @ 2800V
Operating temperatura - Junction :
-50°C ~ 125°C
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
A-IHV130-4
Pinakabagong Balita
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