Vishay Semiconductor Diodes Division - UGB12HT-E3/81

KEY Part #: K6446542

UGB12HT-E3/81 Pagpepresyo (USD) [1730pcs Stock]

  • 800 pcs$0.45803

Bilang ng Bahagi:
UGB12HT-E3/81
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 500V 12A TO263AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays, Mga module ng Power driver, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Diode - Zener - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division UGB12HT-E3/81 electronic components. UGB12HT-E3/81 can be shipped within 24 hours after order. If you have any demands for UGB12HT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UGB12HT-E3/81 Mga katangian ng produkto

Bilang ng Bahagi : UGB12HT-E3/81
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 500V 12A TO263AB
Serye : -
Katayuan ng Bahagi : Obsolete
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 500V
Kasalukuyang - Average na Rectified (Io) : 12A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.75V @ 12A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 30µA @ 500V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device : TO-263AB
Operating temperatura - Junction : -55°C ~ 150°C

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