2SK2009TE85LF Pagpepresyo (USD) [498647pcs Stock]
- 1 pcs$0.07418
- Bilang ng Bahagi:
- 2SK2009TE85LF
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 0.2A SMINI.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Arrays, Thyristors - SCR - Mga Module, Mga module ng Power driver and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage 2SK2009TE85LF electronic components. 2SK2009TE85LF can be shipped within 24 hours after order. If you have any demands for 2SK2009TE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK2009TE85LF Mga katangian ng produkto
Bilang ng Bahagi :
2SK2009TE85LF
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 30V 0.2A SMINI
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
200mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 50MA, 2.5V
Vgs (th) (Max) @ Id :
1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
70pF @ 3V
Tampok ng FET :
-
Power Dissipation (Max) :
200mW (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SC-59-3
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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