Toshiba Semiconductor and Storage - SSM6J213FE(TE85L,F

KEY Part #: K6407580

SSM6J213FE(TE85L,F Pagpepresyo (USD) [944660pcs Stock]

  • 1 pcs$0.05194
  • 4,000 pcs$0.05168

Bilang ng Bahagi:
SSM6J213FE(TE85L,F
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
MOSFET P CH 20V 2.6A ES6.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Diode - Zener - Arrays, Mga module ng Power driver, Diode - Rectifiers - Arrays and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage SSM6J213FE(TE85L,F electronic components. SSM6J213FE(TE85L,F can be shipped within 24 hours after order. If you have any demands for SSM6J213FE(TE85L,F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6J213FE(TE85L,F Mga katangian ng produkto

Bilang ng Bahagi : SSM6J213FE(TE85L,F
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : MOSFET P CH 20V 2.6A ES6
Serye : U-MOSVI
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2.6A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 103 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 4.7nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 10V
Tampok ng FET : -
Power Dissipation (Max) : 500mW (Ta)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : ES6
Pakete / Kaso : SOT-563, SOT-666

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