Microsemi Corporation - APTM10HM19FT3G

KEY Part #: K6522651

APTM10HM19FT3G Pagpepresyo (USD) [1796pcs Stock]

  • 1 pcs$24.23878
  • 100 pcs$24.11819

Bilang ng Bahagi:
APTM10HM19FT3G
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
MOSFET 4N-CH 100V 70A SP3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Transistor - Espesyal na Pakay, Thyristors - SCR - Mga Module, Diode - Mga Rectifier ng Bridge, Thyristors - Mga TRIAC, Diode - RF and Transistor - Programmable Unijunction ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation APTM10HM19FT3G electronic components. APTM10HM19FT3G can be shipped within 24 hours after order. If you have any demands for APTM10HM19FT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM10HM19FT3G Mga katangian ng produkto

Bilang ng Bahagi : APTM10HM19FT3G
Tagagawa : Microsemi Corporation
Paglalarawan : MOSFET 4N-CH 100V 70A SP3
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 4 N-Channel (H-Bridge)
Tampok ng FET : Standard
Drain sa Source Voltage (Vdss) : 100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 70A
Rds On (Max) @ Id, Vgs : 21 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 5100pF @ 25V
Kapangyarihan - Max : 208W
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : SP3
Package ng Tagabigay ng Device : SP3

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