[13011pcs Stock]
- Bilang ng Bahagi:
- FDB5645
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 80A TO-263AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Transistor - Espesyal na Pakay, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDB5645 electronic components. FDB5645 can be shipped within 24 hours after order. If you have any demands for FDB5645, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB5645 Mga katangian ng produkto
Bilang ng Bahagi :
FDB5645
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 60V 80A TO-263AB
Serye :
PowerTrench®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
80A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
107nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4468pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
125W (Tc)
Temperatura ng pagpapatakbo :
-65°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D²PAK (TO-263AB)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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