IRFD224 Pagpepresyo (USD) [90300pcs Stock]
- 1 pcs$0.43517
- 500 pcs$0.43301
- Bilang ng Bahagi:
- IRFD224
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 250V 630MA 4-DIP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga TRIAC, Transistor - Mga FET, MOSFET - Single, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Arrays and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix IRFD224 electronic components. IRFD224 can be shipped within 24 hours after order. If you have any demands for IRFD224, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD224 Mga katangian ng produkto
Bilang ng Bahagi :
IRFD224
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 250V 630MA 4-DIP
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
250V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
630mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.1 Ohm @ 380mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
260pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
1W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
4-DIP, Hexdip, HVMDIP
Pakete / Kaso :
4-DIP (0.300", 7.62mm)
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