IRF200P222 Pagpepresyo (USD) [5393pcs Stock]
- 1 pcs$7.64174
- 400 pcs$4.79194
- Bilang ng Bahagi:
- IRF200P222
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 182A TO247AC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Programmable Unijunction, Diode - RF, Thyristors - Mga SCR, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - FET, MOSFET - RF and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF200P222 electronic components. IRF200P222 can be shipped within 24 hours after order. If you have any demands for IRF200P222, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF200P222 Mga katangian ng produkto
Bilang ng Bahagi :
IRF200P222
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 200V 182A TO247AC
Serye :
StrongIRFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
182A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.6 mOhm @ 82A, 10V
Vgs (th) (Max) @ Id :
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs :
203nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9820pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
556W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247AC
Pakete / Kaso :
TO-247-3
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