DMN1019UVT-7 Pagpepresyo (USD) [635766pcs Stock]
- 1 pcs$0.05818
- 3,000 pcs$0.05240
- Bilang ng Bahagi:
- DMN1019UVT-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 12V 10.7A TSOT26.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - RF, Diode - Zener - Single, Transistor - Programmable Unijunction, Mga Transistor - JFET and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN1019UVT-7 electronic components. DMN1019UVT-7 can be shipped within 24 hours after order. If you have any demands for DMN1019UVT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN1019UVT-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMN1019UVT-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 12V 10.7A TSOT26
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10.7A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 9.7A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
50.4nC @ 8V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
2588pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
1.73W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TSOT-26
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
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