Rohm Semiconductor - RFUH10NS4STL

KEY Part #: K6428380

RFUH10NS4STL Pagpepresyo (USD) [127997pcs Stock]

  • 1 pcs$0.31946
  • 1,000 pcs$0.31787
  • 2,000 pcs$0.29668
  • 5,000 pcs$0.28185

Bilang ng Bahagi:
RFUH10NS4STL
Tagagawa:
Rohm Semiconductor
Detalyadong Paglalarawan:
DIODE GEN PURP 430V 10A LPDS. Diodes - General Purpose, Power, Switching 430V Vrm 10A Io Recovery Diode
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistors - IGBTs - Single, Diode - Zener - Arrays, Thyristors - Mga TRIAC, Diode - Zener - Single, Mga Transistor - JFET, Transistor - IGBTs - Arrays and Transistor - Bipolar (BJT) - Single ...
Kumpetensyang Pakinabang:
We specialize in Rohm Semiconductor RFUH10NS4STL electronic components. RFUH10NS4STL can be shipped within 24 hours after order. If you have any demands for RFUH10NS4STL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RFUH10NS4STL Mga katangian ng produkto

Bilang ng Bahagi : RFUH10NS4STL
Tagagawa : Rohm Semiconductor
Paglalarawan : DIODE GEN PURP 430V 10A LPDS
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 430V
Kasalukuyang - Average na Rectified (Io) : 10A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 10A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 430V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device : LPDS
Operating temperatura - Junction : 150°C (Max)

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