Vishay Semiconductor Diodes Division - UGE8JT-E3/45

KEY Part #: K6442285

UGE8JT-E3/45 Pagpepresyo (USD) [3186pcs Stock]

  • 4,000 pcs$0.14936

Bilang ng Bahagi:
UGE8JT-E3/45
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 8A TO220AC.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Mga Transistor - Bipolar (BJT) - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - RF and Mga module ng Power driver ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division UGE8JT-E3/45 electronic components. UGE8JT-E3/45 can be shipped within 24 hours after order. If you have any demands for UGE8JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UGE8JT-E3/45 Mga katangian ng produkto

Bilang ng Bahagi : UGE8JT-E3/45
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 600V 8A TO220AC
Serye : -
Katayuan ng Bahagi : Obsolete
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 8A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.75V @ 8A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Kasalukuyang - Reverse Leakage @ Vr : 30µA @ 600V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Through Hole
Pakete / Kaso : TO-220-2
Package ng Tagabigay ng Device : TO-220AC
Operating temperatura - Junction : -55°C ~ 150°C

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