C3M0280090J Pagpepresyo (USD) [24354pcs Stock]
- 1 pcs$1.69229
- Bilang ng Bahagi:
- C3M0280090J
- Tagagawa:
- Cree/Wolfspeed
- Detalyadong Paglalarawan:
- MOSFET N-CH 900V 11A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Mga Module, Thyristors - Mga SCR, Diode - RF, Transistor - Mga FET, MOSFET - Arrays, Mga module ng Power driver and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Cree/Wolfspeed C3M0280090J electronic components. C3M0280090J can be shipped within 24 hours after order. If you have any demands for C3M0280090J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
C3M0280090J Mga katangian ng produkto
Bilang ng Bahagi :
C3M0280090J
Tagagawa :
Cree/Wolfspeed
Paglalarawan :
MOSFET N-CH 900V 11A
Serye :
C3M™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
SiCFET (Silicon Carbide)
Drain sa Source Voltage (Vdss) :
900V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
15V
Rds On (Max) @ Id, Vgs :
360 mOhm @ 7.5A, 15V
Vgs (th) (Max) @ Id :
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs :
9.5nC @ 15V
Vgs (Max) :
+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 600V
Tampok ng FET :
-
Power Dissipation (Max) :
50W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D2PAK-7
Pakete / Kaso :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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