DMN3035LWN-7 Pagpepresyo (USD) [460537pcs Stock]
- 1 pcs$0.08031
- 3,000 pcs$0.07188
- Bilang ng Bahagi:
- DMN3035LWN-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 30V 5.5A 8VDFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Mga Transistor - JFET, Diode - Rectifiers - Arrays, Mga module ng Power driver and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN3035LWN-7 electronic components. DMN3035LWN-7 can be shipped within 24 hours after order. If you have any demands for DMN3035LWN-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3035LWN-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMN3035LWN-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2N-CH 30V 5.5A 8VDFN
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.5A
Rds On (Max) @ Id, Vgs :
35 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
399pF @ 15V
Kapangyarihan - Max :
770mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
V-DFN3020-8
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