NVMFD5873NLWFT1G Pagpepresyo (USD) [83368pcs Stock]
- 1 pcs$0.46901
- 1,500 pcs$0.42640
- Bilang ng Bahagi:
- NVMFD5873NLWFT1G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 60V 10A SO8FL.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Mga Transistor - JFET, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays, Diode - RF and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NVMFD5873NLWFT1G electronic components. NVMFD5873NLWFT1G can be shipped within 24 hours after order. If you have any demands for NVMFD5873NLWFT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFD5873NLWFT1G Mga katangian ng produkto
Bilang ng Bahagi :
NVMFD5873NLWFT1G
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET 2N-CH 60V 10A SO8FL
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A
Rds On (Max) @ Id, Vgs :
13 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
30.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1560pF @ 25V
Kapangyarihan - Max :
3.1W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerTDFN
Package ng Tagabigay ng Device :
8-DFN (5x6) Dual Flag (SO8FL-Dual)
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