SCT30N120 Pagpepresyo (USD) [2908pcs Stock]
- 1 pcs$13.67198
- 10 pcs$12.60917
- 100 pcs$10.76746
- Bilang ng Bahagi:
- SCT30N120
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CH 1200V 45A HIP247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Thyristors - Mga SCR, Transistors - IGBTs - Single, Diode - Rectifiers - Arrays, Mga module ng Power driver and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics SCT30N120 electronic components. SCT30N120 can be shipped within 24 hours after order. If you have any demands for SCT30N120, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT30N120 Mga katangian ng produkto
Bilang ng Bahagi :
SCT30N120
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 1200V 45A HIP247
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
SiCFET (Silicon Carbide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
40A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 20A, 20V
Vgs (th) (Max) @ Id :
2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 20V
Vgs (Max) :
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds :
1700pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
270W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 200°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
HiP247™
Pakete / Kaso :
TO-247-3
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