IXFH12N120 Pagpepresyo (USD) [6564pcs Stock]
- 1 pcs$6.94015
- 30 pcs$6.90562
- Bilang ng Bahagi:
- IXFH12N120
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1200V 12A TO-247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - JFET, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFH12N120 electronic components. IXFH12N120 can be shipped within 24 hours after order. If you have any demands for IXFH12N120, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH12N120 Mga katangian ng produkto
Bilang ng Bahagi :
IXFH12N120
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1200V 12A TO-247
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3400pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
500W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247AD (IXFH)
Pakete / Kaso :
TO-247-3
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