DMJ70H900HJ3 Pagpepresyo (USD) [64604pcs Stock]
- 1 pcs$0.60827
- 75 pcs$0.60524
- Bilang ng Bahagi:
- DMJ70H900HJ3
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET BVDSS 651V 800V TO251.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Thyristors - Mga SCR, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Arrays, Mga Transistor - Bipolar (BJT) - RF, Diode - Zener - Arrays and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMJ70H900HJ3 electronic components. DMJ70H900HJ3 can be shipped within 24 hours after order. If you have any demands for DMJ70H900HJ3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMJ70H900HJ3 Mga katangian ng produkto
Bilang ng Bahagi :
DMJ70H900HJ3
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET BVDSS 651V 800V TO251
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
700V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
7A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18.4nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
603pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
68W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-251
Pakete / Kaso :
TO-251-3, IPak, Short Leads
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