IRFL014NTRPBF Pagpepresyo (USD) [305674pcs Stock]
- 1 pcs$0.12100
- 2,500 pcs$0.09645
- Bilang ng Bahagi:
- IRFL014NTRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 55V 1.9A SOT223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Single, Diode - Zener - Arrays, Transistors - IGBTs - Single, Diode - RF, Mga Transistor - JFET and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFL014NTRPBF electronic components. IRFL014NTRPBF can be shipped within 24 hours after order. If you have any demands for IRFL014NTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFL014NTRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFL014NTRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 55V 1.9A SOT223
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.9A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
160 mOhm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
1W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-223
Pakete / Kaso :
TO-261-4, TO-261AA
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