Infineon Technologies - IPD031N06L3GATMA1

KEY Part #: K6416857

IPD031N06L3GATMA1 Pagpepresyo (USD) [81292pcs Stock]

  • 1 pcs$0.48099

Bilang ng Bahagi:
IPD031N06L3GATMA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 60V 100A TO252-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Programmable Unijunction, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Transistors - IGBTs - Single, Thyristors - Mga SCR and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPD031N06L3GATMA1 electronic components. IPD031N06L3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPD031N06L3GATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD031N06L3GATMA1 Mga katangian ng produkto

Bilang ng Bahagi : IPD031N06L3GATMA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 60V 100A TO252-3
Serye : OptiMOS™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs : 79nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 13000pF @ 30V
Tampok ng FET : -
Power Dissipation (Max) : 167W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PG-TO252-3
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

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